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©2002 Fairchild Semiconductor CorporationIRFP250 Rev. B IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power fieldeffect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mode of operation. All ofthese power MOSFETs are designed for applications suchas switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.These types can be operated directly from integratedcircuits.Formerly developmental type TA9295. Features ã33A, 200Vãr DS(ON) = 0.085 Ω ãSingle Pulse Avalanche Energy RatedãSOA is Power Dissipation LimitedãNanosecond Switching SpeedsãLinear Transfer CharacteristicsãHigh Input ImpedanceãRelated Literature-TB334 “Guidelines for Soldering Surface MountComponents to PC Boards” Symbol Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBERPACKAGEBRAND IRFP250TO-247IRFP250NOTE:When ordering, use the entire part number. GDSSOURCEDRAINGATEDRAIN(TAB) Data SheetJanuary 2002 ©2002 Fairchild Semiconductor CorporationIRFP250 Rev. B Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified IRFP250UNITS Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DS 200VDrain to Gate Voltage (R GS = 20k Ω) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DGR 200VContinuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D T C = 100 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 3321AAPulsed Drain Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I DM 130AGate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS ± 20VMaximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D 180WLinear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.44W/ o CSingle Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AS 810mJOperating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T J, T STG -55 to 150 o CMaximum Temperature for SolderingLeads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T L Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg 300260 o C o C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE:1.T J = 25 o C to 125 o C. Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITS Drain to Source Breakdown VoltageBV DSS I D = 250 µ A, V GS = 0V (Figure 10)200--VGate Threshold VoltageV GS(TH) V GS = V DS , I D = 250 µ A2.0-4.0VZero Gate Voltage Drain CurrentI DSS V DS = Rated BV DSS , V GS = 0V--25 µ AV DS = 0.8 x Rated BV DSS , V GS = 0V, T C = 125 o C--250 µ AOn-State Drain Current (Note 2)I D(ON) V DS > I D(ON) x r DS(ON)MAX , V GS = 10V33--AGate to Source Leakage Current I GSS V GS = ± 20V-- ± 100nADrain to Source On Resistance (Note 2)r DS(ON) I D = 17A, V GS = 10V (Figures 8, 9)-0.070.085 Ω Forward Transconductance (Note 2)g fs V DS ≥ 50V, I D = 17A (Figure 12)1319-STurn-On Delay Timet d(ON) V DD = 100V, I D = 30A, R GS = 6.2 Ω, V GS = 10V,R L = 3.2 Ω MOSFET Switching Times are EssentiallyIndependent of Operating Temperature-1830nsRise Timet r -125180nsTurn-Off Delay Timet d(OFF) -70100nsFall Timet f -80120nsTotal Gate Charge(Gate to Source + Gate to Drain)Q g(TOT) V GS = 10V, I D = 30A, V DS = 0.8 x Rated BV DSS, I G(REF) = 1.5mA (Figure 14)Gate Charge is Essentially Independent of OperatingTemperature-79120nCGate to Source ChargeQ gs -12-nCGate to Drain “Miller” ChargeQ gd -42-nCInput CapacitanceC ISS V DS = 25V, V GS = 0V, f = 1MHz (Figure 11)-2000-pFOutput CapacitanceC OSS -800-pFReverse Transfer CapacitanceC RSS -300-pFInternal Drain InductanceL D Measured from the ContactScrew on Header Closer toSource and Gate Pins toCenter of DieModified MOSFETSymbol Showing theInternal DeviceInductances-5.0-nHInternal Source InductanceL S Measured from the SourceLead, 6.0mm (0.25in) fromHeader to Source BondingPad-12.5-nHThermal Resistance, Junction to CaseR θ JC --0.70 o C/WThermal Resistance, Junction to AmbientR θ JA Free Air Operation--30 o C/W L S L D GDS IRFP250 ©2002 Fairchild Semiconductor CorporationIRFP250 Rev. B Source to Drain Diode Specifications PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITS Continuous Source to Drain CurrentI SD Modified MOSFET SymbolShowing the IntegralReverse P-N JunctionRectifier--33APulse Source to Drain Current (Note 3)I SDM --130ASource to Drain Diode Voltage (Note 2)V SD T J = 25 o C, I SD = 33A, V GS = 0V (Figure 13)--2.0VReverse Recovery Timet rr T J = 25 o C, I SD = 30A, dI SD /dt = 100A/ µ s140-630nsReverse Recovery ChargeQ RR T J = 25 o C, I SD = 30A, dI SD /dt = 100A/ µ s1.8-8.1 µ CNOTES:2.Pulse test: pulse width ≤ 300 µ s, duty cycle ≤ ≤ 2%.3.Repetitive rating:pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).4.V DD = 50V, starting T J = 25 o C, L = 1.1mH, R G = 50 Ω, peak I AS = 33A. Typical Performance Curves Unless Otherwise Specified FIGURE 1.NORMALIZED POWER DISSIPATION vs CASETEMPERATUREFIGURE 2.MAXIMUM CONTINUOUS DRAIN CURRENT vsCASE TEMPERATUREFIGURE 3.MAXIMUM TRANSIENT THERMAL IMPEDANCE GDS0501001500T C , CASE TEMPERATURE ( o C) P O W E R D I S S I P A T I O N M U L T I P L I E R 0.20.40.60.81.01.2050100 I D , D R A I N C U R R E N T ( A ) T C , CASE TEMPERATURE ( o C)150257512540322416810.110 -3 10 -5 10 -4 10 -3 10 -2 0.1110 Z θ J C , T H E R M A L I M P E D A N C E t 1 , RECTANGULAR PULSE DURATION (s)SINGLE PULSEP DM NOTES:DUTY FACTOR: D = t 1 /t 2 PEAK T J = P DM x Z θ JC + T C t 1 t 2 0.10.020.20.50.010.0510 -2 IRFP250 ©2002 Fairchild Semiconductor CorporationIRFP250 Rev. B FIGURE 4.FORWARD BIAS SAFE OPERATING AREAFIGURE 5.OUTPUT CHARACTERISTICSFIGURE 6.SATURATION CHARACTERISTICSFIGURE 7.TRANSFER CHARACTERISTICS NOTE: Heating effect of 2 µ s pulse is minimal. FIGURE 8.DRAIN TO SOURCE ON RESISTANCE vs GATEVOLTAGE AND DRAIN CURRENTFIGURE 9.NORMALIZED DRAIN TO SOURCE ONRESISTANCE vs JUNCTION TEMPERATURE Typical Performance Curves Unless Otherwise Specified (Continued) 11010 2 10 3 V DS , DRAIN TO SOURCE VOLTAGE (V)10 3 10 2 1010.1 I D , D R A I N C U R R E N T ( A ) SINGLE PULSET J = MAX RATEDBY r DS(ON) AREA IS LIMITEDOPERATION IN THIS10 µ s100 µ s1ms10msDCT C = 25 o C I D , D R A I N C U R R E N T ( A ) 0204060801020304050100V GS = 7VV GS = 5VV DS , DRAIN TO SOURCE VOLTAGE (V)V GS = 4VPULSE DURATION = 80 µ s0V GS = 10VV GS = 6VDUTY CYCLE = 0.5% MAX010012352030 I D , D R A I N C U R R E N T ( A ) V DS , DRAIN TO SOURCE VOLTAGE (V)40450V GS = 4VV GS = 5VV GS = 6VV GS = 7VV GS = 10VV GS = 8VPULSE DURATION = 80 µ sDUTY CYCLE = 0.5% MAX02468V GS , GATE TO SOURCEVOLTAGE (V)10 2 1010.1 I D , D R A I N C U R R E N T ( A ) T J = 150 o CT J = 25 o C10PULSE DURATION = 80 µ sDUTY CYCLE = 0.5% MAXV DS ≥ 50VI D , DRAIN CURRENT (A) r D S ( O N ) , O N - S T A T E R E S I S T A N C E ( Ω ) 0.50.40.30.20.100255075100125V GS = 20VV GS = 10VPULSE DURATION = 80 µ sDUTY CYCLE = 0.5% MAX N O R M A L I Z E D D R A I N T O S O U R C E 3.01.81.20.60-40040T J , JUNCTION TEMPERATURE ( o C)1201602.480 O N R E S I S T A N C E PULSE DURATION = 80 µ sDUTY CYCLE = 0.5% MAXI D = 17A, V GS = 10V IRFP250
