Chapter 30 Manufacturing

Transcript

P%'(SSI)G * I)+(G%+(I)+(G%+ (- 'I%'I+S 'I%'I+S 1. 2. 3. . #. . 5. vervie/ of I' Processin" Silicon Processin" i!ho"raphy ayer Processes se in I' *arica!ion In!e"ra!in" !he *arica!ion S!eps I' Pac4a"in" 6ields in I' Processin" ©2013 John Wiley & Sons, Sons, Inc. M P Groover, Groover, Principles of Modern Manfac!rin" #$e In!e"ra!ed 'irci! 7I'8    collec!ion collec!ion of elec!ronic elec!ronic devices devices sch as !ransis!ors, !ransis!ors, diodes, and resis!ors !ha! have een farica!ed and elec!rically in!raconnec!ed on!o a s9all fla! chip of se9icondc!or 9a!erial  Silicon 7Si8 : 9os! /idely sed se9icondc!or 9a!erial for I's  ess co99on; "er9ani9 7Ge8 and "alli9 arsenide 7Gas8 ©2013 John Wiley & Sons, Sons, Inc. M P Groover, Groover, Principles of Modern Manfac!rin" #$e In!e"ra!ed 'irci! 7I'8    collec!ion collec!ion of elec!ronic elec!ronic devices devices sch as !ransis!ors, !ransis!ors, diodes, and resis!ors !ha! have een farica!ed and elec!rically in!raconnec!ed on!o a s9all fla! chip of se9icondc!or 9a!erial  Silicon 7Si8 : 9os! /idely sed se9icondc!or 9a!erial for I's  ess co99on; "er9ani9 7Ge8 and "alli9 arsenide 7Gas8 ©2013 John Wiley & Sons, Sons, Inc. M P Groover, Groover, Principles of Modern Manfac!rin" #$e evels of In!e"ra!ion in Microelec!ronics In!e"ra!ion level )9er devices S9all scale in!e"ra!ion 7SSI8 10 ‑ #0 Medi9 scale in!e"ra!ion 7MSI8 #0 ‑ 10 3 ar"e scale in!e"ra!ion 7SI8 10 3 ‑ 10 >ery >ery lar"e scale scale in!e"ra! in!e"ra!ion ion 7>SI8 7>SI8 10  ‑ 10 l!ra lar"e scale in!e"ra!ion in!e"ra!ion 7SI8 10  ‑ 10? Gi"a scale in!e"ra!ion 7GSI8 10 = : 1010 ppro<. year   1=#= 1=0s 1=50s 1=?0s 1==0s 2000s ©2013 John Wiley & Sons, Sons, Inc. M P Groover, Groover, Principles of Modern Manfac!rin" #$e @IS+%6 * I)+(G%+(I)+(G%+ (- 'I%'I+S 'I%'I+S ● ● ● ● -evelop9en! -evelop9en! of radar i99edia!ely efore WWII 71=3=  A 1=#8 +ransis!or develop9en! Inven!ion of !he In!e"ra!ed 'irci! 7I'8 'o99ercial develop9en! if I's ©2013 John Wiley & Sons, Sons, Inc. M P Groover, Groover, Principles of Modern Manfac!rin" #$e vervie/ of I' +echnolo"y     n in!e"ra!ed circi! chip consis!s of hndreds, !hosand, 9illions or illions of 9icroscopic elec!ronic devices   chip is a sBare or rec!an"lar fla! pla!e !ha! is ao! 0.# 99 70.020 in8 !hic4 and !ypically # !o 2# 99 70.2 !o 1.0 in8 on a side (ach elec!ronic device on !he chip srface consis!s of separa!e layers and re"ions /i!h differen! elec!rical proper!ies co9ined !o perfor9 a par!iclar fnc!ion ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e I' +ransis!or   'ross sec!ion of a !ransis!or in an in!e"ra!ed circi! : fea!re siCes can e less !han 0 n9 ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e In!e"ra!ed 'irci!  @i"hly 9a"nified i9a"e of an in!e"ra!ed circi! 7pho!o cor!esy of In!el 'orpora!ion8 ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e Pac4a"in" of I's  +o connec! !he I' !o !he o!side /orld, and !o pro!ec! i! fro9 da9a"e, !he chip is a!!ached !o a lead fra9e and encapsla!ed inside a si!ale pac4a"e  +he pac4a"e is an enclosre, 9ade of plas!ic or cera9ic, !ha! provides 9echanical and environ9en!al pro!ec!ion for !he chip  +he pac4a"e incldes leads y /hich !he I' can e elec!rically connec!ed !o e li"h! ecase of i!s shor!er /avelen"!h  lso per9i!s farica!ion areas in plan! !o e ill9ina!ed a! lo/ li"h! levels o!side > and ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e Pho!oli!ho"raphy ( pho!oli!ho"raphy eco9es increasin"ly inadeBa!e, o!her li!ho"raphy !echniBes !ha! offer hi"her resol!ion are "ro/in" in i9por!ance  (8 li!ho"raphy  (lec!ron ea9 li!ho"raphy  K‑ray li!ho"raphy  Ion li!ho"raphy ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e ayer Processes sed in I' *arica!ion  S!eps !o farica!e I's on a silicon /afer consis! of che9ical and physical processes !ha! add, al!er, or re9ove re"ions defined y pho!oli!ho"raphy  %e"ions are insla!in", se9icondc!in", and condc!in" areas !ha! for9 !he devices and !heir in!raconnec!ions in !he I'  ayers are farica!ed one a! a !i9e, each layer reBirin" a separa!e 9as4, n!il all of !he de!ails have een farica!ed on!o !he /afer srface ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e ayerin" Processes !ha! add or al!er layers in I' *arica!ion  +her9al oapor -eposi!ion 7'>-8 A !ypical reac!ions in I' farica!ion   When a silicon dio-8  '>- involves "ro/!h of a !hin fil9 on !he srface of a hea!ed ss!ra!e y che9ical reac!ions or deco9posi!ion of "ases 7Sec!ion 2.#.28  '>- is /idely sed in !he processin" of in!e"ra!ed circi! /afers !o add layers of Si, Si2, Si3) 7silicon ni!ride8 and varios 9e!alliCa!ion 9a!erials  Plas9a:enhanced '>- is of!en sed ecase i! per9i!s !he reac!ions !o !a4e place a! lo/er !e9pera!res ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e 'he9ical >apor -eposi!ion 7'>-8 A (pi!aapor:phase epi!a- ●  – !o "ro/ Si on Si, closely con!rolled process and a! hi"her !e9pera!res 71200N'8 !han conven!ional '>- Moleclar:ea9 epi!a- ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e In!rodc!ion of I9pri!ies in!o Silicon    I' !echnolo"y relies on !he aili!y !o al!er !he elec!rical proper!ies of silicon y in!rodcin" i9pri!ies in!o selec!ed re"ions of !he srface  'alled Doping  : addin" i9pri!ies in!o Si srface 'o99on dopin" ele9en!s are oron 78, phosphoros 7P8, arsenic 7s8, and an!i9ony 7S8 +echniBes for dopin" silicon; 1. +her9al diffsion 2. Ion i9plan!a!ion ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e Ion I9plan!a!ion  -opin"; >aporiCed ions of i9pri!y ele9en! are accelera!ed y an elec!ric field and direc!ed a! silicon ss!ra!e   !o9s pene!ra!e in!o srface, losin" ener"y and finally s!oppin" a! so9e dep!h in crys!al s!rc!re de!er9ined y 9ass of ion and accelera!ion vol!a"e   dvan!a"es;    'an e acco9plished a! roo9 !e9pera!re  Provides eapor -eposi!ion 7P>-8 A P>- 9e!alliCa!ion processes inclde vac9 evapora!ion and sp!!erin" 28 'he9ical >apor -eposi!ion 7'>-8 A less co99on !han P>38 (lec!ropla!in" 7'hap!er 28 : occasionally sed !o increase !hic4ness of !hin fil9s ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e (!chin" 18 'er!ain s!eps in I' 9anfac!rin" reBire 9a!erial re9oval fro9 srface, acco9plished y e!chin" a/ay n/an!ed 9a!erial 28 sally done selec!ively, y 9as4in" areas !ha! are !o e pro!ec!ed and leavin" o!her areas e- on Si ss!ra!e, 728 Si2 is "ro/n y !her9al o- and doped n !ype 7n 8 sin" ion i9plan!a!ion, 78 poly:Si is selec!ively e!ched sin" pho!o:li!ho"raphy !o define "a!e elec!rode, 758 sorce and drain re"ions 7see *i" 30.18 are for9ed y dopin" n  in ss!ra!e, 7?8 Phosphosilica!e "lass 7P:"lass8 is deposi!ed on!o srface y '>- for pro!ec!ion ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e I' Pac4a"in" 18 *inal series of opera!ions !o !ransfor9 !he /afer in!o individal I' chips a8%eady !o connec! !o !he eira!ion and 9echanical shoc4 38 @ea! dissipa!ion 8 Perfor9ance, reliaili!y, and service life #8 'os! ©2013 John Wiley & Sons, Inc. M P Groover, Principles of Modern Manfac!rin" #$e Manfac!rin" Isses in I' Pac4a"in" 18 'hip separa!ion ‑ c!!in" /afer in!o individal chips 28 'onnec!in" i! !o !he pac4a"e 38 (ncapsla!in" !he chip 8 'irci! !es!in" Mos! of !he desi"n isses are addressed in o!her !earios !echniBes are sed !o ond !he chip !o !he pac4a"in" ss!ra!e, incldin"; a8(!ec!ic die ondin" A for cera9ic pac4a"es 8(po