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CMOSi 1 − x Ge x 130 nm High Sensitivity Ultra-Low Power Temperature Sensor Mourad Hebali 1, ∗ , Djilali Berbara 1 , Mohammed Benzohra 2 , Djilali Chalabi 1 , Abdelkader Saïdane 1 , and Menaouer Bennaoum 3 . 1 Department of Electrical Engineering, ENP Oran, Laboratory CaSiCCe, 31000 Oran, Algeria 2 Department of Networking and Telecommunications, University of Rouen, Laboratory LECAP, 76000, France 3 Department of Science and Technology, University of Mascara, 29000, Algeria (Received: 1 February 2017. Accepted: 23 February 2017) Abstract: The effect of x germanium fraction on the functioning of a CMOSi1 − xGex 130 nm technology temperature sensor is investigated with aims to develop an ultra-low power high sensitivity MOSFET transistor temperature sensor. The detection element is operated in sub-threshold regime to reduce supply voltage. This CMOSi1 − xGex 130 nm temperature sensor has a temperature measuring range from − 120 °C to 120 °C with sensitivity between 0.13253 mV/°C and 0.31919 mV/°C depending on number of transistors ’ stages. The sensor operate under a low voltage between 0.35 V and 0.8 V consuming low power rated between 3.73975 nW and 39.1552 nW. Keywords: Si1 − xGex, CMOSFET, BSIM3V3, 130 nm Technology, Temperature Sensor. Source: Sensor Letters, Volume 15, Number 4, April 2017, pp. 328-332(5) Publisher: American Scientific Publishers
