Ec6201 Electronic Devices Lp.doc

Transcript

` ANJALAI AMMAL – MAHALINGAM ENGINEERING COLLEGE KOVILVENNI KOVILVENNI – 614 403 DEPARTMENT OF E.C.E ISO 9001:2008 CERTIFIED LESSON PLAN NAME OF THE FACULTY : V.DEEPA DEPARTMENT : ELECTRONICS AND COMMUNICATION SUBJECT CODE  SUBJECT : EC6201- ELECTRONICS DEVICES SEMESTER  BRANCH : II& ECE A &B Sec NUMBER OF PERIODS PERIODS GIVEN GIVEN IN THE THE SYLLABU SYLLABUS S : ! T!"#  R!$!%!&'! B(()* T!"# S.N( T+#,! Semiconductor Physics and Devices T1 A-#(% D"#$% A Ne$'$# R1 !undamentals Semiconductor devices R2 Electr Electron on Device Devices s and (ircui (ircuitt Theory L.N( U&+# N(. o"   P-/,+*!% Third Edition, Tata Mc GrawHill Inc.200. . #an$ McGraw Hill International Edition, %&' )o*ert +oylestad and ouis -ashelsy Pearson PrenticeHall, %0 th edition,/uly 200' T(+' #( /! '(!%!2 P! N(.5* ($  T!"# (% R!$!%!&'! B(()  1. SEMICONDUCTOR DIODE I#()"*c(+"# (" '$(e)+$%, $# ,e'+c"#*c("), RB2 (02-06) 2. I#()+#,+c $# e()+#,+c ,e'+c"#*c(")  RB2 (07-10) . PN /*#c(+"# +"e RB2 (10-16) . !. I 6. . 8. 9. C*))e#( e*$(+"#,  TB1 (269- D+*,+"# $# )+( c*))e#( e#,+(+e, 277)  TB1 (1!-13 ")4$) $# )e5e),e +$, c7$)$c(e)+,(+c, " PN  TB1 (238-  /*#c(+"# +"e B)e$"4# 'ec7$#+,' +# PN /*#c(+"# +"e 248)  TB1( 231- E#e) $# ,()*c(*)e " PN /*#c(+"# +"e 232)  TB1 (179- S4+(c7+# C7$)$c(e)+,(+c, 180)  TB1( 234236) BIPOLAR JUNCTION P)+#c+;%e " O;e)$(+"# " PNP< NPN ()$#,+,("), RB2 (131- =*#c(+"#,-E$)% eec(-C*))e#( e*$(+"#, 134) RB2 (131- 12. I#;*( $# O*(;*( c7$)$c(e)+,(+c, " CE 134) RB2 (19-1!3 1. c"#+*)$(*+"# I#;*( $# O*(;*( c7$)$c(e)+,(+c, " CB RB2 (1-183 1. c"#+*)$(*+"# I#;*( $# O*(;*( c7$)$c(e)+,(+c, " CC RB2 (1!-163 10. 11. II c"#+*)$(*+"#< C"';$)+,"# " CE)+ -? '"e%  TB1 (418- 16. 7-;$)$'e(e) '"e% 422)  TB1 (18-223 1. Ee), M"%% M"e%  TB1 (413- @*''e% P""#-'"e%< M*%(+ E'+((e) T)$#,+,("). 416)  TB1 (16-183 FIELD EFFECT TRANSISTORS I#(")*c(+"# (" FET $#( +(, (;e,< ";e)$(+"# " N  TB1 (571- 1!. 18. 19. c7$##e% =FET,  N c7$##e% =FET,  D)$+# $# T)$#,e) 20. c7$)$c(e)+,(+c,<-C*))e#( e*$(+"#,-P+#c7 " 5"%($e $# +(, ,+#++c$#ce P c7$##e% =FET,  D)$+# $# T)$#,e) 21. 22. c7$)$c(e)+,(+c,<-C*))e#( e*$(+"#,-P+#c7 " 5"%($e $# +(, ,+#++c$#ce I#(")*c(+"# (" MOSFET $#( +(, (;e,< S()*c(*)e III 2. $# O;e)$(+"# " e;%e(+"# (;e MOSFET MOSFET- C7$)$c(e)+,(+c,- T7)e,7"% 5"%($e -C7$##e% %e#(7 '"*%$(+"#< D-MOSFET S()*c(*)e $# O;e)$(+"# " E#7$#ce'e#( (;e 2. MOSFET C*))e#( e*$(+"# - E*+5$%e#( c+)c*+( '"e% $# +(, 2!. 26.  ;$)$'e(e), FINFET 2. DUAL @ATE MOSFET  TB1 (571578)  TB1 (571578) RB2 386-392) TB1 486-490) RB2 (392399) TB1 502-504)  NET  NET SPECIAL SEMICONDUCTOR DEVICES RB2 (369Me($%-Se'+c"#*c(") =*#c(+"#- MESFET 28. 29. 0. S()*c(*)e $# ";e)$(+"# " MESFET 402) RB2 (402- Sc7"(( $))+e) +"e 405) RB2 (801806) 1. 2. 575) IV . e#e) +"e $# +(, c7$)$c(e)+,(+c, RB2 (38-39) O;e)$(+"# " V$)$c(") +"e RB2 (806- O;e)$(+"# "T*##e%+"e $# +(, c7$)$c(e)+,(+c, 809) RB2 (809814) @$%%+*' A),e#+e e5+ce . LASER +"e !.  NET  TB1 (434436) LDR%+7( e;e#e#( )e,+,(")3 6.  NET PO7ER DEVICES AND DISPLAY DEVICES . 8. 9. V O;e)$(+"# " U=T $# +(, VI c7$)c(e)+,(+c, RB2 (848- O;e)$(+"# " SCR $# +(, VI c7$)c(e)+,(+c, 856) RB2 (831- O;e)$(+"# " D+$c< T)+$c $# +(, VI c7$)c(e)+,(+c, 841) RB2 (845- 848) 0. P"4e) B=T TB1 8-03 1. P"4e) MOSFET- DMOS-VMOS TB1 -!3 LED< LCD TB1 6-6!03 RB2 (819- 2. . 822) P7"(" ()$#,+,(")